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Brand Name : CANYI
Model Number : ES1A-ES1D
Certification : RoHS
Place of Origin : Guangdong, China
MOQ : 1000PCS
Price : Negotiated
Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability : 15,000,000PCS Per Day
Delivery Time : 3-5 days
Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type : SMD Ultra Fast Rectifier Diode
Package : SMA (DO-214AC)
IF(AV) : 1.0A
VRRM : 50V,100V,150V,200V
trr : 150ns
TJ max. : 150℃
Diode variations : Single
Material : Silicon
Sample : Free
Port : Shenzhen
S1A-ES1D SMA Ultra Fast Rectifier Diode 1A power rectifier diode 200V Surface Mount fast recovery rectifier diode
Features:
Typical applications:
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.
| Parameter | Symbol | ES1A | ES1B | ES1C | ES1D | Unit |
| Device marking code | EA | EB | EC | ED | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | V |
| Maximum average forward rectified current (fig. 1) | IF(AV) | 1.0 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave | IFSM | 30 | A | |||
| superimposed on rated load | TJ, Tstg | -55~+150 | ℃ | |||
| Parameter | Test conditions | Symbol | Value | Unit | |
| Maximum instantaneous forward voltage | IF = 0.6 A | VF (1) | 0.865 | V | |
| IF = 1.0 A | VF | 0.920 | |||
| Maximum DC reverse current at rated DC blocking voltage | TA=25℃ | IR | 5.0 | μA | |
| TA=100℃ | 100 | ||||
| Maximum reverse recovery time | IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A | trr | 15 | ns | |
| Maximum reverse recovery time | IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,Irr = 10 % IRM
| TJ=25℃ | trr | 25 | ns |
| TJ=100℃ | 35 | ||||
| Maximum stored charge | IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,Irr = 10 % IRM | TJ=25℃ | Qrr | 10 | nC |
| TJ=100℃ | 25 | ||||
| Typical junction capacitance | 4.0 V, 1 MHz | Cj | 10 | pF | |
Note
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
| Parameter | Symbol | ES1A | ES1B | ES1C | ES1D | Unit |
| Typical thermal resistance | RθJA (1) | 85 | ℃/W | |||
| RθJL(1) | 35 | |||||
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas.
Our Strict Quality Control:
1. Our quality controller has working in our factory for more than 10 years, very expericed.
2. We will test the each product, each accessory before shipping, to make sure its high quality.
3. We will pack the cargo well to make sure the goods in good status during delivery.
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ES1A-ES1D SMA Ultra Fast High Voltage Diode 200V Surface Mount Silicon Material Images |